| 摘要 |
An object of the present invention is to provide a substrate plating apparatus capable of performing continuous plating operations within one apparatus without the wafers becoming contaminated after the post-plating process by chemicals used in the plating process and the like. Further object is to provide a substrate plating apparatus capable of forming a plating film of uniform thickness on the plating surface of the wafer, while encouraging bubbles to escape from fine holes or grooves in the substrate surface and deterring particles from depositing on the plated surface. According to the present invention, there is provided a substrate plating apparatus for continuously performing a plating process and post-plating process within the same apparatus, the substrate plating apparatus comprising a contaminated zone within which the plating process is performed; a clean zone within which the post-plating process is performed; and a partition dividing the apparatus into the contaminated zone and the clean zone, wherein each zone is independently ventilated. A substrate plating apparatus for plating a surface of a substrate with a plating solution comprises a plating bath that is hermetically sealed and accommodates the substrate to be plated; and a flow path of the plating solution being formed to be parallel to the surface of the substrate.
|
