发明名称 |
Semiconductor integrated circuit device |
摘要 |
In the semiconductor integrated circuit device, an AND-type flash memory is formed on a substrate in which stripe-like element separation regions 5 are formed and active regions L sandwiched between the element separation regions 5 are formed like stripes. A silicon monocrystal substrate containing nitrogen or carbon is used as the semiconductor substrate, to reduce dislocation defects and junction leakages so that the reliability and yield are improved.
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申请公布号 |
US6583467(B2) |
申请公布日期 |
2003.06.24 |
申请号 |
US20020179217 |
申请日期 |
2002.06.26 |
申请人 |
HITACHI, LTD. |
发明人 |
NISHIMOTO TOSHIAKI;AOYAGI TAKASHI;KIYOTA SHOGO |
分类号 |
G11C16/04;H01L21/322;H01L21/76;H01L21/762;H01L21/8234;H01L21/8247;H01L27/115;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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