发明名称 |
Fabrication of low resistance, non-alloyed, OHMIC contacts to INP using non-stoichiometric INP layers |
摘要 |
A method of reducing the specific contact resistivity of a metal to semiconductor interface between a metal contact and an InP semiconductor compound. The method includes the step of increasing the amount of the group V element (P) in the semiconductor compound so that the semiconductor compound is non-stoichiometric having an excess concentration of the group V element in an amount of at least 0.1% above stoichiometric levels.
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申请公布号 |
US6583455(B1) |
申请公布日期 |
2003.06.24 |
申请号 |
US20000693630 |
申请日期 |
2000.10.19 |
申请人 |
HRL LABORATORIES, INC. |
发明人 |
MICOVIC MIROSLAV;DOCTER DANIEL P. |
分类号 |
H01L21/28;H01L21/285;H01L21/331;H01L21/338;H01L29/45;H01L29/737;H01L29/778;H01L29/812;(IPC1-7):H01L31/072;H01L31/109;H01L31/032 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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