| 摘要 |
Leakage detection for cells in a flash memory device. According to one embodiment of the present invention a method includes reading a flash cell in a read cycle in a flash memory device to generate a read signal, generating several reference signals, comparing the read signal with each of the reference signals in the read cycle, generating a data signal based on the comparison to indicate data stored in the flash cell, and generating a refresh signal based on the comparison to request a refresh of the flash cell if the flash cell is leaky. According to another embodiment of the present invention a flash memory device includes a number of flash cells, a read circuit to generate a read signal in a read cycle of the flash memory device by reading a selected one of the flash cells, a reference circuit to generate a plurality of reference signals, and a comparing circuit to compare the read signal with each of the reference signals in the read cycle to generate a data signal indicating data stored in the selected flash cell and to generate a refresh signal if the selected flash cell is leaky.
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