Method for fabricating a trench isolation for electrically active components

摘要

A method for fabricating a trench isolation for electrically active components in a semiconductor component. A mask is applied to a semiconductor substrate. Subsequently, a trench having side walls is formed in the semiconductor substrate by performing a dry etching process using at least one etching gas such that during the dry etching process, polymers are produced that at least partly cover the side walls of the trench and thereby at least partially protect the side walls against an etching attack from the etching gas. The etching gas is provided with a compound that is selected from the group consisting of at least one hydrocarbon compound and a fluorinated hydrocarbon compound. The trench is filled with an insulating oxide.