| 摘要 |
Some of a plurality of alignment marks formed in advance on a substrate are selected, and the positions of the selected alignment marks are detected in turn. The layout regularity of a plurality of patterns on the substrate is determined on the basis of the design coordinate values and actually measured values of the alignment marks. A pattern is written on the patterns by moving a stage relative to the electron beam on the basis of the layout regularity of the plurality of patterns. During writing, one of the selected alignment marks is irradiated with an electron beam, and electrons reflected by the alignment mark are detected, thereby detecting the mark position. Any difference between this actually measured value and the previous actually measured value is calculated, and the relative position between the electron beam and stage is corrected based on this difference.
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