Electrostatic discharge protection for integrated semiconductor devices using channel stop field plates

摘要

A semiconductor structure which protects against damages to an integrated circuit caused by electrostatic discharge (ESD) at a power supply pin includes a channel stop field plate coupled between a power supply terminal associated with the power supply pin and contacts to N-type substrate or N-wells formed in the semiconductor structure receiving the power supply voltage. The field plate functions to inhibit surface leakage current and is also used to introduce a resistance between the power supply pin and connections to N-wells or the N-substrate, thereby providing protection to the wells or substrate against damages caused by an ESD event. By exploiting an existing structure used in typical integrated circuit for ESD protection, ESD immunity of a semiconductor device can be enhanced without consuming additional silicon area.