发明名称 |
Semiconductor device and method of forming a semiconductor device |
摘要 |
A semiconductor device includes group III-V layers formed over a substrate. At least one of the group III-V layers is doped with a dopant. The dopant includes a first dopant and one of a second dopant and an isovalent impurity. The first dopant has a covalent radius different in size than the covalent radii of each of the second dopant and the isovalent impurity.
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申请公布号 |
US6583449(B2) |
申请公布日期 |
2003.06.24 |
申请号 |
US20010849233 |
申请日期 |
2001.05.07 |
申请人 |
XEROX CORPORATION |
发明人 |
NORTHRUP JOHN E.;VAN DE WALLE CHRISTIAN G. |
分类号 |
H01L29/20;H01L29/207;H01L33/30;H01L33/32;(IPC1-7):H01L33/00 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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