| 发明名称 |
Semiconductor device and method of manufacturing the same |
| 摘要 |
The semiconductor device comprises a capacitor electrode defining openings which are made in each insulating layer, are communicated with one another and have different diameters at least at their coupling portions, the capacitor electrode is formed to extend along the surfaces of the openings.
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| 申请公布号 |
US6583461(B2) |
申请公布日期 |
2003.06.24 |
| 申请号 |
US20010938833 |
申请日期 |
2001.08.27 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
YOKOYAMA YUICHI;YASUMURA SHUNJI |
| 分类号 |
H01L21/02;H01L21/8242;H01L27/108;(IPC1-7):H01L27/108;H01L29/76;H01L29/94 |
主分类号 |
H01L21/02 |
| 代理机构 |
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| 主权项 |
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