发明名称 Magnetic random access memory
摘要 A semiconductor integrated circuit device comprises a plurality of magnetic tunneling junction elements, a writing word line which provides an auxiliary magnetic field for writing data to the plurality of magnetic tunneling junction elements, a plurality of bit lines connected to ones of ends of the respective plurality of magnetic tunneling junction elements, and a cell selecting transistor. The cell selecting transistor is commonly connected to other ends of the respective plurality of magnetic tunneling junction elements.
申请公布号 US6584011(B2) 申请公布日期 2003.06.24
申请号 US20020113364 申请日期 2002.03.27
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 WATANABE KENTARO
分类号 G11C11/14;G11C11/02;G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L27/22;H01L31/072;H01L31/109;H01L43/08;(IPC1-7):G11C11/02 主分类号 G11C11/14
代理机构 代理人
主权项
地址