发明名称 Light emitter device and a method for manufacturing the same
摘要 A light emitter including a substrate, at least one semiconductor layer of a first conductivity type formed on the substrate, at least one semiconductor layer of a second conductivity type formed on a partial region of the semiconductor layer of the first conductivity type, a first bonding electrode connected to the semiconductor layer of the first conductivity type and a second bonding electrode connected to an almost entire surface of the semiconductor layer of the second conductivity type, wherein the substrate is transparent to light emitted from a proximity of a junction between the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, the second bonding electrode is formed to have an almost rectangular shape and a substantially minimum area for bonding, and sides of the emitter are disposed in three directions of the circumstance of the second bonding electrode.
申请公布号 US6583442(B2) 申请公布日期 2003.06.24
申请号 US19990402493 申请日期 1999.09.30
申请人 SHARP KABUSHIKI KAISHA 发明人 ITO SHIGETOSHI
分类号 H01L33/32;H01L33/38;H01L33/42;H01L33/62;(IPC1-7):H01L27/15;H01L33/00 主分类号 H01L33/32
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