Production method for silicon wafer and SOI wafer, and SOI wafer

摘要

There are provided a method for manufacturing a mirror polished wafer with little polishing sag (peripheral sag) by a relatively easy method, a method for manufacturing a bonded wafer having an SOI layer or a bond layer which has no periphery removing region or reduces it, and a bonded wafer thereof.There is prepared a silicon wafer having chamfered portions in which when the chamfering width of the front surface side of the silicon wafer is X1 and the chamfering width of the back surface side thereof is X2, X1X1).