发明名称 |
Sidewall NROM and method of manufacture thereof for non-volatile memory cells |
摘要 |
An non-volatile read only memory transistor for use in a memory array is disclosed. The non-volatile read only memory transistor features a substantially vertically oriented channel fabricated in a trench formed in the substrate. The channel length is dependent upon the depth of the trench and therefore a dense array of NROM transistors can be formed without adversely affecting the channel length and therefore the operational performance of the transistor.
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申请公布号 |
US6583479(B1) |
申请公布日期 |
2003.06.24 |
申请号 |
US20000688936 |
申请日期 |
2000.10.16 |
申请人 |
ADVANCED MICRO DEVICES, INC.;FUJITSU LIMITED |
发明人 |
FASTOW RICHARD M.;HOLLMER SHANE C.;CHEN PAU-LING;VAN BUSKIRK MICHAEL;HIGASHITANI MASAAKI |
分类号 |
G11C16/04;G11C16/14;H01L21/28;H01L21/336;H01L21/8246;H01L27/115;H01L29/423;H01L29/788;H01L29/792;H01L31/062;(IPC1-7):H01L31/062 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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