| 摘要 |
<p>A structure and method for protecting a plastic substrate from heat damage during fabrication of thin film transistors on the substrate is disclosed. A polymer coating is applied to the plastic substrate that can act as a thermal barrier and withstand the silicon crystallization temperature provided by laser annealing of amorphous silicon. A combination of both inorganic and organic polymer material, and specifically a polysiloxane coating, is found to prevent damage to the plastic substrate during the crystallization process. A thin layer of polysiloxane liquid resin, when combined with a proper mixture of solvents, can be applied on the substrate by spin, dip or other similar techniques in less than 30 seconds. In order to enhance the cross linking density of the polymer network, the coating is subjected to a short pre-cure at one temperature followed by a longer postcure at a higher temperature for several hours. This curing can be carried out in a batch process, and thus does not affect the throughput. A thin layer of oxide can be deposited over the polymer coating prior to the deposition of an a-Si film if desired, or, alternatively, the a-Si film may also be applied directly over the polymer coating.</p> |
