发明名称 ITO SPUTTERING TARGET HAVING REDUCED OCCURRENCE QUANTITY OF NODULE
摘要 <P>PROBLEM TO BE SOLVED: To efficiently produce a sintered compact target of high density which has reduced occurrence of nodules in a sputtering process where a transparent electrode film is formed while maintaining the high transparency of visible light and high electrical conductivity, and to obtain a target which can suppress the reduction of productivity and the reduction of quality caused by the occurrence of nodules. <P>SOLUTION: In an ITO (compound oxide essentially consisting of indium oxide-tin oxide: In<SB>2</SB>O<SB>3</SB>-SnO<SB>2</SB>) sputtering target obtained by subjecting a powdery mixture in which the mixing ratio x of tin oxide powder satisfies 9.5&le;x&le;10.5 (wt.%), and the balance indium oxide powder, dissolution residue in the case the target is dissolved with aqua regia, and is filtered with a filter of 0.2 &mu;m thickness is defined as y (wt.ppm), y&le;e(2.03x-20.3) is satisfied, then the amount of the occurrence of a modle is reduced. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003171761(A) 申请公布日期 2003.06.20
申请号 JP20010375303 申请日期 2001.12.10
申请人 NIKKO MATERIALS CO LTD 发明人 NAKAJIMA KOICHI;KURIHARA TOSHIYA;KUMAHARA YOSHIKAZU;TATENO SATOSHI
分类号 C04B35/457;C23C14/34 主分类号 C04B35/457
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