SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device using SiC and its manufacturing method which hardly brings about the breakdown voltage reduction or block breakdown. SOLUTION: The method comprises steps of forming an n-type SiC semiconductor layer 2 with a semiconductor layer central part 3 and a semiconductor layer peripheral part 5 on a semiconductor substrate 1, implanting the upside of the semiconductor layer peripheral part with a p-type impurity to form an impurity-implanted layer 6, forming an Ohmic electrode 7 beneath the substrate 1, forming an Ni - electrode body 8 on the semiconductor layer central part, and forming an Al electrode cover 9 covering the electrode body 8 and extending onto a part of the impurity-implanted layer. COPYRIGHT: (C)2003,JPO