发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a structure of a semiconductor device using group IV crystal containing C, and to provide its manufacturing method. SOLUTION: Embedded oxide is formed in a Si substrate and SiGeC crystal is deposited on Si above it to improve the performance of a MOS transistor. COPYRIGHT: (C)2003,JPO
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申请公布号 |
JP2003174161(A) |
申请公布日期 |
2003.06.20 |
申请号 |
JP20010371257 |
申请日期 |
2001.12.05 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
KANZAWA YOSHIHIKO;SAITO TORU;ASAI AKIRA;ONISHI TERUTO |
分类号 |
H01L29/78;H01L29/786;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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