发明名称 DISCHARGE PLASMA PROCESSING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a discharge plasma processing method that can control with high accuracy by equally distributing, with less control valves, the introducing quantity of a processing gas to the introducing piping for an electrode structure of a plurality of remote devices. <P>SOLUTION: In the discharge plasma processing method for processing an workpiece outside a discharge space using an electrode structure for generating glow discharge plasma by applying an electric field through the introduction of a processing gas between a pair of electrodes, at least one face of counter electrodes is covered with a solid dielectric. The method is characterized by the control in which, with more than one electrode structure, the introducing quantity of the processing gas into the plurality of electrode structures is adjusted with the control valves, the number of which is smaller by one than that of the processing gas introducing pipings for each electrode structure, so that the gas flow rate of the entire pipings is equalized. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003171769(A) 申请公布日期 2003.06.20
申请号 JP20010375996 申请日期 2001.12.10
申请人 SEKISUI CHEM CO LTD 发明人 ONO TSUYOSHI;YAMAKAWA TATSUSABURO
分类号 H05H1/46;B01J19/08;C23C16/507;H01L21/302;H01L21/3065;H01L21/31 主分类号 H05H1/46
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