发明名称 METHOD FOR FORMING SILICON FILM AND COMPOSITION THEREFOR
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor thin film easily and in an inexpensive way, the method not requiring expensive, energy-intensive, large-scale equipment, and being applicable to a large-area substrate, and to provide a silane composition therefor. <P>SOLUTION: A solar battery with a structure having, between a pair of electrodes, at least two laminated semiconductor thin film layers having different impurity concentrations and/or different kind of impurities, is manufactured by forming at least one of the semiconductor thin film layers according to the method comprising the steps of forming a coating film by applying onto the substrate a silane composition comprising (A) a polysilane compound represented by the formula: Si<SB>n</SB>R<SB>m</SB>, (B) at least one type of silane compound selected from the group consisting of cyclopentasilane, cyclohexasilane and silylcyclopentasilane, (C) silicon particles, and optionally, (D) a boron compound, an arsenic compound, a phosphorus compound, an antimony compound and a modified silane compound, and by thermally and/or optically processing the coating film. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003171556(A) 申请公布日期 2003.06.20
申请号 JP20010375992 申请日期 2001.12.10
申请人 JSR CORP 发明人 SHIHO KOUJI;KATO HITOSHI
分类号 C01B33/02;C08L83/16;C09D183/16;H01L31/04;(IPC1-7):C08L83/16 主分类号 C01B33/02
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