| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical semiconductor device that inhibits the collector voltage dependency of the collector current of a transistor while achieving a structure for reducing the capacity and increasing the speed of a photodiode, and at the same time can inhibit the increase in the saturation voltage of the transistor in the transistor and the photodiode formed on the same substrate, and the provide a manufacturing method of the optical semiconductor device. SOLUTION: In the optical semiconductor device, a photodiode PD and an NPN transistor TR are formed on the same semiconductor substrate. The photodiode PD has a high-concentration P-type layer PDP, an I-type PDI, and a high-concentration N-type layer PDN. The NPN transistor TR comprises a P-type base region B having a high-concentration P-type region B1 physically connected to the high concentration P-type PDP of the photodiode PD as its one region, and an N-type emitter region E that is formed in an N-type collector region and the P-type base region B with the high-concentration N-type region C1 physically connected to the high-concentration N-type layer of the photodiode PD as the partial region. The N-type collector region C has an N-type well region CW reaching the P-type base region B from the high- concentration N-type region C1. COPYRIGHT: (C)2003,JPO
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