| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device free of element breakage, of which parasitic bipolar transistor action owing to yielding or the generation of hot carriers will not occur. SOLUTION: The device is equipped with a gate electrode G which is formed on a semiconductor substrate, a channel layer which is formed in a surface region of the semiconductor substrate corresponding to the gate electrode G, pairs of impurity diffused layers 1a and 1b, and 2a and 2b which are formed on both sides of the channel layer in the surface region of the semiconductor substrate, and a single or plurality of projection layers 5 which are so formed in contact with the pairs of impurity diffusion layers 1a and 1b, and 2a and 2b that the polarity is different from that of the impurity diffused layers 1a and 1b, and 2a and 2b and not inverted with a voltage applied to the gate electrode G. COPYRIGHT: (C)2003,JPO
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