发明名称 METHOD OF SELECTIVELY ETCHING SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a method of etching a thin-film circuit in a quite efficient manner while ensuring etching selectivity when the thin-film circuit is formed on a semiconductor substrate, without causing any corrosion on a switching element or a wiring material which are used for the semiconductor substrate and the thin-film circuit. SOLUTION: When a conductive thin film is etched, etching is selectively performed by using an etching solution made of an oxidizing agent and a chelating agent. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003174021(A) 申请公布日期 2003.06.20
申请号 JP20010373329 申请日期 2001.12.06
申请人 SHARP CORP;MITSUBISHI GAS CHEM CO INC 发明人 NAKAHARA SEI;TAKEUCHI YUKIHIKO;HASHIMOTO RYO;MARUYAMA TAKEHITO;ABE HISAOKI;AOYAMA TETSUO
分类号 H01L21/28;H01L21/308;H01L21/3213;(IPC1-7):H01L21/308;H01L21/321 主分类号 H01L21/28
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