发明名称 |
METHOD OF SELECTIVELY ETCHING SEMICONDUCTOR SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of etching a thin-film circuit in a quite efficient manner while ensuring etching selectivity when the thin-film circuit is formed on a semiconductor substrate, without causing any corrosion on a switching element or a wiring material which are used for the semiconductor substrate and the thin-film circuit. SOLUTION: When a conductive thin film is etched, etching is selectively performed by using an etching solution made of an oxidizing agent and a chelating agent. COPYRIGHT: (C)2003,JPO
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申请公布号 |
JP2003174021(A) |
申请公布日期 |
2003.06.20 |
申请号 |
JP20010373329 |
申请日期 |
2001.12.06 |
申请人 |
SHARP CORP;MITSUBISHI GAS CHEM CO INC |
发明人 |
NAKAHARA SEI;TAKEUCHI YUKIHIKO;HASHIMOTO RYO;MARUYAMA TAKEHITO;ABE HISAOKI;AOYAMA TETSUO |
分类号 |
H01L21/28;H01L21/308;H01L21/3213;(IPC1-7):H01L21/308;H01L21/321 |
主分类号 |
H01L21/28 |
代理机构 |
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