| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that, when the conventional plasma cleaning is performed on a dry etching system 50, gaseous ions 66 contained in plasma 65 mainly etch deposits near a lower electrode 62 and a chamber 51 near an upper electrode 59 is not cleaned even when a time is taken for cleaning, although the material actually affecting a wafer 55 are deposits in the chamber 51. SOLUTION: In a dry etching system 10, an upper electrode is divided into two parts of an inner peripheral electrode 19 and an outer peripheral electrode 24 and the electrodes 19 and 24 are made to be connected arbitrarily to a high- frequency power source or ground. The electrodes 19 and 24 are insulated from each other. In addition, the electrodes 19 and 24 are also insulated from a chamber 11. COPYRIGHT: (C)2003,JPO
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