发明名称 SUBSTRATE TREATING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a substrate treating device that can reduce the feed rate of an inert gas, such as nitrogen gas, by surrounding the whole surface to be treated of a substrate with an atmosphere of the inert gas and, at the same time, preventing formation of a turbulent flow of the inert gas in the periphery of the substrate. SOLUTION: This substrate treating device is provided with a substrate holding section 1 which rotates the substrate W while holding the substrate W, a first treating liquid supply section 3 which supplies a treating liquid to the surface to be treated of the substrate W held by the holding section 1, and an inert gas supply section 2 which is provided over the holding section 1 and forms a down flow of the inert gas so as to cover the whole surface to be treated of the substrate W. This device is also provided with a housing 5 housing the holding section 1, first treating liquid supply section 3, and inert gas supply section 2. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003174006(A) 申请公布日期 2003.06.20
申请号 JP20010370756 申请日期 2001.12.04
申请人 EBARA CORP 发明人 ITO KENYA;HAMADA TOSHIMI;YOKOYAMA TOSHIO
分类号 G02F1/13;B08B3/02;G02F1/1333;H01L21/304;H01L21/306;(IPC1-7):H01L21/304 主分类号 G02F1/13
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