发明名称 PINNED LAYER, SPIN VALVE STRUCTURE AND ITS FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a spin valve structure wherein superior thermal stability can be ensured in a reverse magnetic field, its forming method and a pinned layer which acts as one constituent of the spin valve structure. SOLUTION: The pinned layer 35 comprises a laminate wherein a nickel chromium alloy layer 32 is interposed between a cobalt iron alloy layer 31 and a cobalt iron alloy layer 33, and especially, the pinned layer 35 is so constituted that the thickness of the cobalt iron alloy layer 31 which is positioned on a near side to a spacer layer 24 becomes about the twice of the cobalt iron alloy layer 33. In the spin valve structure which is provided with the pinned layer 35, deterioration of characteristic which is caused by temperature rise in annealing is restrained, so that superior thermal stability can be ensured in a reverse magnetic field. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003174213(A) 申请公布日期 2003.06.20
申请号 JP20010369036 申请日期 2001.12.03
申请人 HEADWAY TECHNOLOGIES INC 发明人 SEI SHUKO;MIN RI;NYO EIDO;EI FUKUSHO
分类号 G01R33/09;G11B5/39;H01F10/28;H01F10/32;H01L43/08;H01L43/12;(IPC1-7):H01L43/08 主分类号 G01R33/09
代理机构 代理人
主权项
地址