| 摘要 |
PROBLEM TO BE SOLVED: To suppress the occurrence of the slip pattern of an epiwafer. SOLUTION: The implement for heat treating the silicon wafer comprises a base 2 for placing the silicon wafer 4, and support protrusions 3 disposed on the periphery of the base 2 and coupled to the base 2 and brought into contact with the silicon wafer 4 at three positions and formed intermittently. The protrusions 3 have a first support protrusion 3-1, a second support protrusion 3-2, and a third support protrusion 3-3. The central point of the wafer 4 is used as an origin. A first axis [010] and a second axis [001] perpendicularly crossed to each other in parallel with the plane of the wafer 4 through the origin are set. A first perpendicular plane crossed perpendicularly to the first axis and passing through the origin passes through the two contact areas in which the first protrusion 3-1 and the third protrusion 3-3 are brought into contact with the wafer 4. A second perpendicular plane passing through the origin and crossed perpendicularly to the first perpendicular plane passes through the contact area in which the second protrusion 3-2 is brought into contact with the wafer 4. COPYRIGHT: (C)2003,JPO
|
