| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of easily depositing an SiCN thin film at a low temperature with a high reproducibility. SOLUTION: As a material gas, a gas obtained by vaporizing hexamethyldisilane is used, and the gas is blown on a substrate in a film deposition chamber. On the other hand, a nitrogen ion beam is generated from gaseous nitrogen by an ion source, and the surface of the substrate is irradiated with the ion beam in≤300 eV simultaneously when the material gas is blown on the substrate, so that an SiCN thin film is deposited at≤300°C. COPYRIGHT: (C)2003,JPO
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