发明名称 |
RESIST REMOVING COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To reliably remove a resist and polymer residue and to minimize damage to wiring. SOLUTION: After a metallic film or a semiconductor film on a semiconductor substrate is dry-etched to form a wiring layer having a prescribed pattern or after an insulating layer is formed on a semiconductor substrate with a formed wiring layer and dry-etched in a prescribed pattern, chemical treatment is carried out with a resist removing composition prepared by adding a sugar alcohol to a composition comprising a fluorine compound, an organic solvent and water. The pH of the resist removing composition is adjusted to≥8. Xylitol may be used as the sugar alcohol. COPYRIGHT: (C)2003,JPO |
申请公布号 |
JP2003173033(A) |
申请公布日期 |
2003.06.20 |
申请号 |
JP20010370742 |
申请日期 |
2001.12.04 |
申请人 |
SONY CORP;EKC TECHNOLOGY KK |
发明人 |
IWAMOTO ISATO;KANEMURA RYUICHI;ENDO AI;SUZUKI TOMOKO;HIRAGA TOSHITAKA |
分类号 |
G03F7/42;H01L21/027;H01L21/306;H01L21/768;(IPC1-7):G03F7/42 |
主分类号 |
G03F7/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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