| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for measuring the alignment of a photolithographic step capable of correcting the error range of a pattern image to be transferred to the contraction and the expansion of the image, by measuring the aligning state to each short region on a wafer so as to be more effective and reliable. SOLUTION: The method for measuring the alignment of the photolithographic step comprises the step of conducting a realignment, by substituting a compensating value for the error range of an alignment correcting value by a step on the wafer corresponding to the disposition of the wafer based on the alignment correcting value for an exposure. COPYRIGHT: (C)2003,JPO
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