| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device suitable for a light source for a Raman amplifier capable of obtaining a stable and high gain and to provide a semiconductor laser module. SOLUTION: An n-type InP clad layer 2, a GRIN-SCH-MQW active layer 3, a p-type InP spacer layer 4, a p-type InP clad layer 6 and a p-type InGaAsP contact layer 8 are sequentially laminated on an n-type InP substrate 1, and an n-type electrode 11 is disposed on the lower part of the substrate 1. Diffraction gratings 13a, 13b are disposed on the partial region of the layer 4, an insulating film 16 is disposed on the layer 8 corresponding to the grating 13a to prevent the injection current from flowing to the grating 13a. COPYRIGHT: (C)2003,JPO |
