| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing electron beam lithography mask which prevents damages on the surface of an SOI layer and effects good ethcing onto a silicon base layer in the case where an SOI substrate is employed, and provide mask blanks for electron beam lithography. <P>SOLUTION: The mask blanks for electron beam lithography are manufactured as intermediate products by forming a protective coat 14 and a hard mask 15 on the front and back sides of the SOI substrate 10 (Fig. 1 (A)), respectively (process for simultaneously forming a protective film and a hard mask in Fig. 1 (B)), followed by subjecting the silicon base layer 13 and a BOX layer 12 to etching. Subsequently, the SOI layer 11 is subjected to etching to complete the electron beam lithography mask having openings for permeating electron beams. <P>COPYRIGHT: (C)2003,JPO</p> |
