METHOD AND DEVICE FOR REMOVING POLYMER

摘要

PROBLEM TO BE SOLVED: To provide a method and device for removing polymer by which polymer (resist residue) can be removed selectively and surely through an inexpensive process. SOLUTION: The vapor of an aqueous hydrofluoric acid solution is introduced to the surface of a wafer W heated to a prescribed temperature by a hot plate 45 from a hydrofluoric acid vapor generating vessel 43. On the surface of the wafer W, a copper wiring film and an insulating film composed of a low-K material are formed. Since the temperature dependency of the etching rate of hydrofluoric acid in vapor-phase etching is extremely high, the polymer left on the wafer W can be removed satisfactorily and selectively without damaging the copper wiring film and insulating film. After the vapor-etching, the wafer W can be subjected to a physical cleaning step as necessary. COPYRIGHT: (C)2003,JPO