发明名称 METHOD OF MANUFACTURING CAPACITANCE ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a method of stably manufacturing a ferroelectric capacitance element in which a coverage defect is not generated when a contact hole is formed. SOLUTION: The method of manufacturing the capacitance element comprises a process in which an insulating layer 7 is formed on a support substrate 1 so as to cover the capacitance element constituted of a lower electrode 3, a capacitance insulating layer 4 and an upper electrode 5 formed on the support substrate 1 and a process in which a photoresist mask 9 having an opening 8 is formed on the insulating layer 7 and in which the opening 8 in the photoresist mask 9 is worked to be a shape having a taper angle 12 by dry- etching the photoresist mask 9. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003174095(A) 申请公布日期 2003.06.20
申请号 JP20010371762 申请日期 2001.12.05
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MATSUNAGA KEIICHI
分类号 H01L27/04;H01L21/822;H01L21/8246;H01L27/105;(IPC1-7):H01L21/822 主分类号 H01L27/04
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