发明名称 |
METHOD OF MANUFACTURING CAPACITANCE ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of stably manufacturing a ferroelectric capacitance element in which a coverage defect is not generated when a contact hole is formed. SOLUTION: The method of manufacturing the capacitance element comprises a process in which an insulating layer 7 is formed on a support substrate 1 so as to cover the capacitance element constituted of a lower electrode 3, a capacitance insulating layer 4 and an upper electrode 5 formed on the support substrate 1 and a process in which a photoresist mask 9 having an opening 8 is formed on the insulating layer 7 and in which the opening 8 in the photoresist mask 9 is worked to be a shape having a taper angle 12 by dry- etching the photoresist mask 9. COPYRIGHT: (C)2003,JPO
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申请公布号 |
JP2003174095(A) |
申请公布日期 |
2003.06.20 |
申请号 |
JP20010371762 |
申请日期 |
2001.12.05 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
MATSUNAGA KEIICHI |
分类号 |
H01L27/04;H01L21/822;H01L21/8246;H01L27/105;(IPC1-7):H01L21/822 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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