| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a power converter where voltage over the dielectric breakdown strength of a semiconductor element is not applied, by reducing the voltage applied between the base plate of a semiconductor element arranged on the side of the highest voltage and a main terminal, even if the number of series of semiconductor elements is large in a high-voltage power converter. <P>SOLUTION: This power converter is equipped with a group of semiconductor elements for power conversion which are constituted by connecting a plurality of pieces of semiconductor elements in series, a conductive member for severally mounting the group of the semiconductor elements, and a potential giving means which gives the conductive members a specified potential. The specified potential is one within a range lower than the peak value and higher than bottom value out of the potentials given to both ends of the group of semiconductor elements. <P>COPYRIGHT: (C)2003,JPO |
