METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride semiconductor light emitting element capable of sufficiently activating an impurity in a nitride semiconductor layer even by a heat treatment at a low temperature. SOLUTION: The method for manufacturing the nitride semiconductor light emitting element comprises the step of forming a p-type AlGaN clad layer 7 and a p-type GaN contact layer 8 on an MQW light emitting layer 6, the step of forming a Pd electrode layer 9 on the layer 7 and the layer 8, and the step of thereafter activating the impurity in the layer 7 and the layer 8 by heat treating at about 300°C. COPYRIGHT: (C)2003,JPO