| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory in which high integration and high speed can be realized. SOLUTION: This semiconductor memory is provided with a first pre-charge transistor 200 connecting a voltage source to one end side of a bit line when bit lines BLn, /BLn are pre-charged, and a second pre-charge transistor 220 connecting a voltage source to the other end side of a bit line when bit lines are pre-charged. A first pre-charge signal is inputted to a gate of the first pre-charge transistor, a second pre-charge signal generated based on a chip select-signal and the first pre-charge signal is inputted to a gate of the second pre-charge transistor. The second pre-charge transistor 220 is made a cut off state in a standby period in which corresponding memory cell holds data without reading and writing data. COPYRIGHT: (C)2003,JPO
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