| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory in which current consumption at the time of sensing can be reduced and power consumption can be reduced. SOLUTION: This device comprises a memory cell array, bit lines of each cell constituting the memory cell array, many sense amplifiers constituted in accordance with the bit lines and the bit line bars, a control signal generating circuit driven in accordance with many signals for sensing the cells of the memory cell array and generating first to third control signals, first and second switching means driven respectively in accordance with the first and second control signal from the control signal generating circuit, supplying power source voltage to a first terminal of the sense amplifier, and supplying ground voltage to a second terminal, and a charge recycling circuit driven in accordance with a power-up signal and the third control signal from the control signal generating circuit, supplying electric charges of the prescribed potential to the first and the second terminals in accordance with operation of the sense amplifier, or accumulating electric charges of the first and second terminals. COPYRIGHT: (C)2003,JPO
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