发明名称 |
Method for improved programming efficiency in flash memory cells |
摘要 |
A method of operating a non-volatile memory device includes providing the non-volatile memory device with a body of first conductivity, a source region of second conductivity, a drain region of second conductivity on the body, and a control gate over the body adjacent to the source and drain regions. A first voltage of first polarity is applied to the control gate. A second voltage of first polarity is applied to the drain region, the second voltage being less than about 5.6 volts. A third voltage of second polarity is applied to the source region.
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申请公布号 |
US2003112660(A1) |
申请公布日期 |
2003.06.19 |
申请号 |
US20020229925 |
申请日期 |
2002.08.27 |
申请人 |
WINBOND ELECTRONICS CORPORATION |
发明人 |
LIN SHI-TRON;CHEN WEI-FAN |
分类号 |
G11C16/04;G11C16/12;(IPC1-7):G11C11/34 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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