发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method of manufacturing a semiconductor device is provided to improve contact between two lines by forming a via having a multi-layered structure. CONSTITUTION: The first via(32) being in contact with the first line is formed on a substrate(10) having the first line. The first interlayer dielectric(40) is deposited on the substrate and planarized. The second via(52) to be in contact with the fist via is formed on the first interlayer dielectric. The second interlayer dielectric(60) is deposited on the substrate having the second via and planarized. The second line is formed on the second interlayer dielectric to contact the second via.
申请公布号 KR20030048221(A) 申请公布日期 2003.06.19
申请号 KR20010078092 申请日期 2001.12.11
申请人 ANAM SEMICONDUCTOR., LTD. 发明人 CHO, GYEONG SU
分类号 H01L21/768;(IPC1-7):H01L21/768 主分类号 H01L21/768
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