| 摘要 |
PURPOSE: A method of forming a contact plug in a semiconductor device is provided to improve electrical property of the semiconductor device by preventing P(phosphorus) in a contact plug from being diffused into lateral sides of a silicon substrate. CONSTITUTION: A gate oxide layer(22) and a gate(24) are sequentially formed on a silicon substrate(20), forming a space buffer layer(26) on both side wall of the gate to form a contact hole in order to expose a portion of the silicon substrate between a gate and a gate closest to it. A silicon epitaxial growth layer(30) is selectively formed in the contact hole by using a SEG(Selective Epitaxial Growth) process. A plug ion implantation process is carried out on the silicon epitaxial growth layer, and a contact plug(34) is formed on the silicon epitaxial growth layer in the contact hole.
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