发明名称 |
Infrared detection element and method for fabricating the same and equipment for measuring temperature |
摘要 |
To provide a thermopile infrared detecting element capable of accurate temperature measurement at low cost. An infrared detecting element 1 using a silicon nitride film as a first structure layer 22 constituting a structure of a membrane portion 4 is provided. Unlike silicon oxide, the first structure layer 22 has internal stress in the tensile direction, and can thus prevent the occurrence of bending. Also, diodes D1 and D2 can be formed in a silicon substrate 2 by using the first structure layer 22 as an element isolation region, and thus deformation of a thermopile 12 due to a change in the environment can be prevented to suppress measurement error of the thermopile 12. Furthermore, a high accuracy infrared detecting element capable of accurately detecting the temperature of cold junctions using the diodes D1 and D2 can be provided.
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申请公布号 |
US2003111605(A1) |
申请公布日期 |
2003.06.19 |
申请号 |
US20020258641 |
申请日期 |
2002.10.25 |
申请人 |
SATO SHIGEMI;YAMASHITA HIDETO;HAGIHARA TSUTOMU |
发明人 |
SATO SHIGEMI;YAMASHITA HIDETO;HAGIHARA TSUTOMU |
分类号 |
A61B5/01;G01J5/16;H01L23/00;(IPC1-7):G01J5/20 |
主分类号 |
A61B5/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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