发明名称 |
METHOD FOR PREVENTING POLLUTION IN BACK SIDE GRINDING OF WAFER |
摘要 |
PURPOSE: A method for preventing pollutions in a semiconductor device is provided to be capable of preventing the pollutions due to silicon particles caused by polishing back side grinding of a silicon wafer. CONSTITUTION: A silicon wafer is provided with a plurality of dies(1) due to a scribe line(3). A passivation layer is formed on the dies(1) to expose a pad(2). After attaching a tape on the front surface of the silicon wafer, the rear surface is polished. At this time, in order to prevent pollutions of the pad(2) due to silicon particles, a dummy pattern(40) is also formed on the scribe line(3) adjacent to edge portions of the wafer when forming the passivation layer.
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申请公布号 |
KR20030048207(A) |
申请公布日期 |
2003.06.19 |
申请号 |
KR20010078074 |
申请日期 |
2001.12.11 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
EOM, JAE DU;KIM, JONG HUN |
分类号 |
H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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