发明名称 METHOD FOR PREVENTING POLLUTION IN BACK SIDE GRINDING OF WAFER
摘要 PURPOSE: A method for preventing pollutions in a semiconductor device is provided to be capable of preventing the pollutions due to silicon particles caused by polishing back side grinding of a silicon wafer. CONSTITUTION: A silicon wafer is provided with a plurality of dies(1) due to a scribe line(3). A passivation layer is formed on the dies(1) to expose a pad(2). After attaching a tape on the front surface of the silicon wafer, the rear surface is polished. At this time, in order to prevent pollutions of the pad(2) due to silicon particles, a dummy pattern(40) is also formed on the scribe line(3) adjacent to edge portions of the wafer when forming the passivation layer.
申请公布号 KR20030048207(A) 申请公布日期 2003.06.19
申请号 KR20010078074 申请日期 2001.12.11
申请人 HYNIX SEMICONDUCTOR INC. 发明人 EOM, JAE DU;KIM, JONG HUN
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
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