发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
A high performance super-minituarized double gate SOIMOS being fabricated by re-distributing the impurity with high concentration at the interface of a buried gate insulative film and by aligning the double gate in a self-aligned manner and furthermore, by isolating completely the buried gate electrodes electrically from each other, in which a multi-layered SOI substrate having an amorphous or polycrystal semiconductor layer constituted by way of a buried gate insulative film to a lower portion of an SOI layer is used, ion implantation is applied to the semiconductor layer in a pattern opposite to the upper gate electrode and the buried gate is constituted in a self-alignment relation with the upper gate.
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申请公布号 |
US2003113961(A1) |
申请公布日期 |
2003.06.19 |
申请号 |
US20020299793 |
申请日期 |
2002.11.20 |
申请人 |
HORIUCHI MASATADA;TAKAHAMA TAKASHI |
发明人 |
HORIUCHI MASATADA;TAKAHAMA TAKASHI |
分类号 |
H01L29/43;H01L21/336;H01L21/8238;H01L21/84;H01L27/08;H01L27/092;H01L27/12;H01L29/423;H01L29/49;H01L29/78;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
H01L29/43 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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