Method for the epitaxy of (indium, aluminum, gallium) nitride on foreign substrates

摘要

The invention relates to a process for the epitaxy of (indium, aluminum, gallium) nitride on foreign substrates. The object of the invention is to find a maskless process which nevertheless achieves the advantages of reduced dislocation by using lateral overgrowth. Said object is accomplished in that indentations (7) are provided on the surface of substrates (1), the walls (4) of said indentations (7) being such that the growth fronts of the (In,Al,Ga)N layers (3) on the bottoms of the indentations (7) are separated from those on the protrusions (6) situated therebetween.