发明名称 MEASUREMENT OF METAL ELECTROPLATING AND SEED LAYER THICKNESS AND PROFILE
摘要 <p>A method and system for measuring metal electroplating barrier and seed layer thickness and profile. Using optical metrology(210), profiles of post-barrier deposition grating and post-seed deposition grating(220) can be measured non-destructively. In turn, the thickness and profile of the barrier layer can be determined by subtracting the profile of the post-barrier deposition grating from the profile of the substrate damascene grating(240). Similarly, the thickness and profile of the seed layer can be determined by subtracting the profile of the post-seed deposition gratin from the profile of the post-barrier deposition grating.</p>
申请公布号 WO2003050473(A1) 申请公布日期 2003.06.19
申请号 US2002039987 申请日期 2002.12.13
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