| 摘要 |
PURPOSE: A method for manufacturing an MIM(Metal Insulator Metal) type capacitor of a semiconductor device is provided to be capable of previously preventing the volume motion of a lower electrode by reducing the stress due to the material difference between an upper and lower metal layer through a pre-heat treatment. CONSTITUTION: After sequentially forming an interlayer dielectric(1) and a lower metal layer(103) on a semiconductor substrate, a heat treatment is carried out on the surface of the lower metal layer(103). After sequentially forming an insulating layer and an upper metal layer on the lower metal layer, the upper metal layer and the insulating layer are selectively etched. Then, a logic capacitor is completed by selectively etching the lower metal layer. Preferably, the heat treatment is carried out by using N2 gas at the temperature of 350 °C.
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