发明名称 |
Simplified bottom electrode-barrier structure for making a ferroelectric capacitor stacked on a contact plug |
摘要 |
The present invention is related to the realization of a simplified bottom electrode stack for ferroelectric memory cells. More particularly, the invention is related to ferroelectric memory cells wherein the ferroelectric capacitor is positioned directly on top of a contact plug. The bottom electrode stack is prepared by depositing a ferroelectric film atop an Ir or Ru metal electrode layer, then annealing the ferroelectric layer in an oxygen ambient wherein the partial pressure of oxygen is controlled at a level sufficient to oxidize the ferroelectric layer but not at a level sufficient to oxidize the metal electrode layer
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申请公布号 |
US2003112649(A1) |
申请公布日期 |
2003.06.19 |
申请号 |
US20020292363 |
申请日期 |
2002.11.08 |
申请人 |
WOUTERS DIRK;EVERAERT JEAN-LUC;LISONI JUDIT |
发明人 |
WOUTERS DIRK;EVERAERT JEAN-LUC;LISONI JUDIT |
分类号 |
H01L21/02;H01L21/314;H01L21/316;(IPC1-7):G11C11/22;G11C11/24 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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