发明名称 Semiconductor production device and production method for semiconductor device
摘要 The present invention provides a semiconductor manufacturing apparatus capable of shortening TAT by completing a plurality of processes including plating, annealing, and CMP-in-twice or the like in copper wiring process in a single manufacturing apparatus, and is also capable of suppressing costs for consumable materials by replacing the CMP step with other step. The apparatus of the present invention comprises an electrolytic plating chamber (11) for performing electrolytic plating of a substrate (91), an electrolytic polishing chamber (21) for performing electrolytic polishing of the substrate, and a conveying chamber (81) having installed therein a conveying instrument (83) responsible for loading/unloading of the substrate to or from the electrolytic plating chamber, and to or from he electrolytic polishing chamber, and is connected respectively to the electrolytic plating chamber and the electrolytic polishing chamber. The conveying chamber may further have connected thereto an electroless plating chamber, an annealing chamber, a liquid treatment chamber or the like.
申请公布号 US2003113996(A1) 申请公布日期 2003.06.19
申请号 US20020149858 申请日期 2002.10.07
申请人 NOGAMI TAKESHI;KOMAI NAOKI 发明人 NOGAMI TAKESHI;KOMAI NAOKI
分类号 C23C18/16;B24B37/04;C25D5/02;C25D7/12;C25D17/00;C25D19/00;C25F3/30;H01L21/00;H01L21/288;H01L21/306;H01L21/3063;H01L21/3205;H01L21/321;H01L21/768;H01L23/52;H01L23/532;(IPC1-7):H01L21/476 主分类号 C23C18/16
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