| 发明名称 |
CMOS PROCESS WITH AN INTEGRATED, HIGH PERFORMANCE, SILICIDE AGGLOMERATION FUSE |
| 摘要 |
A complementary metal oxide semiconductor (CMOS) fabrication process. The process comprises creating a polysilicon layer having a first thickness for a transistor gate area and a second thickness for a fuse area. The first thickness is greater than the second thickness, wherein most of the polysilicon in the fuse area will react with a metal layer to form polysilicide during a rapid thermal anneal (RTA) process.
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| 申请公布号 |
WO03050858(A1) |
申请公布日期 |
2003.06.19 |
| 申请号 |
WO2002US39482 |
申请日期 |
2002.12.09 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
THURUTHIYIL, CIBY;FISHER, PHILIP, A. |
| 分类号 |
H01L23/52;H01L21/3205;H01L21/82;H01L21/8234;H01L21/8238;H01L27/06;(IPC1-7):H01L21/283;H01L21/324;H01L21/335 |
主分类号 |
H01L23/52 |
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