| 摘要 |
A dynamic semiconductor memory device and a refresh control method for reducing refresh current are disclosed. The device according to the present invention comprises a flip-flop, receiving a word line supplied from a row decoder and a write command signal for commanding write operation, for storing and holding a value indicating the presence of a write history when the word line and the write command signal are activated, and a control circuit, receiving an output of the flip-flop, a word line, a refresh command signal on a word line, for exercising control so that when the word line and the refresh command signal are activated, in case of the output of said flop-flop indicating a value representative of the presence of the write history, a normal refresh operation is performed, and in case of the output of said latch circuit indicating a value representative of the absence of the write history, one of control signals for controlling sensing operation by a sense amplifier is inactivated, thereby stopping the refresh operation.
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